Field Effect Transistors for Terahertz Detection: Physics and First Imaging Applications

By Wojciech Knap, Mikhail I. Dyakonov, D. Coquillat, F. Teppe, N. Dyakonova, J. Łusakowski, K. Karpierz, M. Sakowicz, G. Valušis, D. Seliuta and 4 more. 2009

311 citations recorded by the source corpus.

Resonant frequencies of the two-dimensional plasma in FETs increase with the reduction of the channel dimensions and can reach the THz range for sub-micron gate lengths. Nonlinear properties of the electron plasma in the transistor channel can be used for the detection and mixing of THz frequencies. At cryogenic temperatures resonant and gate voltage tunable detection related to plasma waves resonances is observed. At room temperature, when plasma oscillations are overdamped, the FET can operate as an efficient broadband THz detector. We present the main theoretical and experimental results on THz detection by FETs in the context of their possible application for THz imaging.

Subfields: Astronomy and Astrophysics, Biomedical Engineering, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/a2fdf573c7a7a9f19e326b05b9112ac6f67614c8

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Citations in the corpus

• Review of Terahertz Tomography Techniques (2014, background): “For example, the source could be a quantum cascade laser [72], Gunn diode [73], plasma wave transistor [74, 75], Backward Wave Oscillator [76], and this list in non exhaustive.”