Voltage-induced perpendicular magnetic anisotropy change in magnetic tunnel junctions

By T. Nozaki, Y. Shiota, M. Shiraishi, T. Shinjo, Yoshishige Suzuki. 2010

229 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/549a010a494ff1d702f2c156909474eeee027b73

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. M. Chshiev
2. Bernard Dieny
3. Kang L. Wang
4. P. Amiri
5. C. Marrows

In Electronic, Optical and Magnetic Materials

1. Bernard Dieny
2. M. Chshiev

In Materials Chemistry

1. M. Chshiev
2. Bernard Dieny

Citations in the corpus

• Induction of coherent magnetization switching in a few atomic layers of FeCo using voltage pulses. (2011, background): “embedded in conventional magnetic tunnel junctions (MTJs; refs&#xA”
• Perpendicular magnetic anisotropy at transition metal/oxide interfaces and applications (2017, background): “Major attention has been paid to VCMA at FM=MgO interfaces and in MTJ, both experimentally (Shiota et al., 2009, 2012; Endo et al., 2010; Nozaki et al., 2010; Seki et al., 2011; Wang et al., 2012) and theoretically (Nakamura et al., 2010; Niranjan et al., 2010; Shimabukuro et al., 2010; Tsujikawa…”