Origin and passivation of fixed charge in atomic layer deposited aluminum oxide gate insulators on chemically treated InGaAs substrates

By B. Shin, Justin R. Weber, R. Long, P. Hurley, C. Walle, Paul C. McIntyre. 2010

173 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/5421446db8f3649418e187586eb9bbb8e095574f