The unusual mechanism of partial Fermi level pinning at metal-MoS2 interfaces.

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Thermal conductivity determination of suspended mono- and bilayer WS2 by Raman spectroscopy (2015, methodology): “Au film) are used in our case, since metals may significantly modify the properties of 1L TMD [47].”
Van der Waals metal-semiconductor junction: Weak Fermi level pinning enables effective tuning of Schottky barrier (2016, background): “(ii) An interface dipole formed by the charge redistribution at the interface can shift the electronic levels from their original positions, leading to a deviation from the Schottky-Mott limit (2, 9, 20, 21).”
Progress in Contact, Doping and Mobility Engineering of MoS2: An Atomically Thin 2D Semiconductor (2018, background): “According to their calculations, the FLP at the metal/MoS2 interface is a result of two simultaneous effects: first, a modification of the metal work function by interface dipole formation due to the charge redistribution at the interface and, second, by the formation of mid-gap states originating f”
Recent Advances in Two-Dimensional Materials beyond Graphene. (2015, background): “certain energy in the bandgap of the channel material irrespective of the work functions of the metals.(294) For Mo-based chalcogenides, the pinning occurs near the conduction band edge, whereas for W-based chalcogenides, the pinning occurs close to the midgap.”