Free-Standing GaN Substrates by Hydride Vapor Phase Epitaxy

By S. Park, I. Park, S. Choh. 2000

135 citations recorded by the source corpus.

Subfields: Biomedical Engineering, Condensed Matter Physics, Mechanics of Materials

View Paper: https://www.semanticscholar.org/paper/52e9ca818e54bd07906848a6ef2c4847b0daa9b0

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Biomedical Engineering

1. U. Gösele

Citations in the corpus

• Heterogeneous Integration of Compound Semiconductors (2010, background): “Bulk-type GaN wafers of high crystalline quality are usually obtained by hydride vapor-phase epitaxy growth of thick GaN layers on sapphire substrates and subsequent separation from these substrates (174).”