Electron tunneling through atomically flat and ultrathin hexagonal boron nitride
By G. Lee, Young‐Jun Yu, Changgu Lee, Cory R. Dean, Kenneth L. Shepard, Philip Kim, James C. Hone. 2011
503 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/52941a72ab9b425e838384662f40cbfc581055a6
How researchers see this paper
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In Electrical and Electronic Engineering
- Kaustav Banerjee
- Wei David Liu
- W. Yao
- Xiaodong Xu
- K. Novoselov
- Jiahao Kang
- A. C. Castro Neto
- Takashi Taniguchi
In Materials Chemistry
- K. Novoselov
- Kenji Watanabe
- Takashi Taniguchi
- Xiaodong Xu
- A. C. Castro Neto
- Kaustav Banerjee
- W. Yao
- A. Mishchenko
Citations in the corpus
- 2D materials and van der Waals heterostructures (2016, background): “Graphene can be combined with semiconductor and insulating 2D crystals to create a tunnel junction (69).”
- Computational Study of Metal Contacts to Monolayer Transition-Metal Dichalcogenide Semiconductors (2014, background): “Hence, it is necessary to develop a comprehensive understanding of the nature of the electronic interface between metals and mTMDs, going beyond the analytical Schottky barrier (SB) theory.”