Tunneling electroresistance in ferroelectric tunnel junctions with a composite barrier
By M. Zhuravlev, Yong Wang, E. Tsymbal, S. Maekawa. 2009
141 citations recorded by the source corpus.
Tunneling electroresistance (TER) effect is the change in the electrical resistance of a ferroelectric tunnel junction (FTJ) associated with polarization reversal in the ferroelectric barrier layer. Here we predict that a FTJ with a composite barrier that combines a functional ferroelectric film and a thin layer of a nonpolar dielectric can exhibit a significantly enhanced TER. Due to the change in the electrostatic potential with polarization reversal, the nonpolar dielectric barrier acts as a switch that changes its barrier height from a low to high value. The predicted values of TER are giant and indicate that the resistance of the FTJ can be changed by several orders in magnitude at the coercive electric field of ferroelectric.
Subfields: Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/51fff9e84c80165232c6a37dcbe2c78b1af6ef47
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In Electrical and Electronic Engineering
In Electronic, Optical and Magnetic Materials
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Citations in the corpus
- Ferroelectric tunnel junctions for information storage and processing (2014, background): “The use of different electrode materials is, however, not mandatory and the asymmetry may come from the interfaces only because of different interface terminations 16 , an ultrathin dielectric layer at one of the interfaces 98 or pinned interface dipoles 99,100 .”