A review of SiC power module packaging: Layout, material system and integration

By Cai Chen, F. Luo, Yong Kang. 2017

233 citations recorded by the source corpus.

Silicon-Carbide (SiC) devices with superior performance over traditional silicon power devices have become the prime candidates for future high-performance power electronics energy conversion. Traditional device packaging becomes a limiting factor in fully realizing the benefits offered by SiC power devices, and thus, improved and advanced packaging structures are required to bridge the gap between SiC devices and their applications. This paper provides a review of the state-of-art advanced module packaging technologies for SiC devices with the focuses on module layout, packaging material system, and module integration trend, and links these packaging advancements to their impacts on the SiC device performances. Through this review, the paper discusses main challenges and potential solutions for SiC modules, which is critical for future SiC applications.

Subfields: Electrical and Electronic Engineering, Mechanical Engineering

View Paper: https://www.semanticscholar.org/paper/50daf096a93b1f87069110729e39138ae5c0b88d

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In Electrical and Electronic Engineering

1. Shuo Wang
2. Boyi Zhang

Citations in the corpus

• A Survey of EMI Research in Power Electronics Systems With Wide-Bandgap Semiconductor Devices (2020, background): “Other packaging considerations and detailed comparison between different technologies and layouts are summarized in [83] and [84].”
• Electric Drive Technology Trends, Challenges, and Opportunities for Future Electric Vehicles (2021, unknown): “Some commercial SiC modules use direct substrate cooling (by eliminating the base plate) to improve thermal performance; some examples are Infineon Easy 1B and Semikron MiniSKiiP modules [24].”
• A Review of SiC Power Module Packaging Technologies: Challenges, Advances, and Emerging Issues (2020, background): “On the other hand, different stacks of the substrate layers, such as insulated metal substrate (IMS) and thick film technology, are introduced [15], [106].”