Spatially resolved spectroscopy of monolayer graphene on SiO2

By A. Deshpande, Wenzhong Bao, Feng Miao, C. N. Lau, B. LeRoy. 2008

203 citations recorded by the source corpus.

We carried out scanning tunneling spectroscopy measurements on exfoliated monolayer graphene on ${\text{SiO}}_{2}$ to probe the correlation between its electronic and structural properties. Maps of the local density of states are characterized by electron and hole puddles that arise due to long-range intravalley scattering from intrinsic ripples in graphene and random-charged impurities. At low energy, we observe short-range intervalley scattering which we attribute to lattice defects. Our results demonstrate that the electronic properties of graphene are influenced by intrinsic ripples, defects, and the underlying ${\text{SiO}}_{2}$ substrate.

Subfields: Atomic and Molecular Physics, and Optics, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/506d7de0051a3f5eef3a3a662161eb5b6191ce0e

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The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. E. Rossi
2. Takashi Taniguchi
3. E. Hwang
4. S. Adam
5. D. Basov
6. Kenji Watanabe
7. Feng Wang
8. M. Fogler

In Materials Chemistry

1. Takashi Taniguchi
2. Kenji Watanabe
3. E. Rossi
4. E. Hwang
5. S. Adam
6. Feng Wang
7. D. Basov
8. P. Jarillo-Herrero

Citations in the corpus

• STM Spectroscopy of ultra-flat graphene on hexagonal boron nitride (2011, result): “Author contributions J.X. and B.J.L. performed the STM experiments of the graphene on hBN. A.D. performed the STM experiments of graphene on SiO2.”
• Colloquium: Graphene spectroscopy (2014, methodology): “By tuning the electron densityN with a back gate (Yuanbo Zhang et al., 2008; Deshpande et al., 2009; Brar et al., 2010), one can change the Fermi energy EF with respect to theDirac pointED.”
• Scanning tunnelling microscopy and spectroscopy of ultra-flat graphene on hexagonal boron nitride. (2011, background): “However, accessing the physics of the low-density region at the Dirac point has been difficult because of disorder that leaves the graphene with local microscopic electron and hole puddle”
• Electronic transport in two-dimensional graphene (2010, background): “In particular Deshpande et al. (2009a) starting from the topographic data calculated the carrier density fluctuations due to the local curvature of the graphene layer using Eq.”
• Evolution of microscopic localization in graphene in a magnetic field from scattering resonances to quantum dots (2010, background): “If E F is close to E D , then spatially alternating patterns of electron and hole puddles are forme”
• Origin of spatial charge inhomogeneity in graphene (2009, background): “), probably due to roughness in the underlying SiO 2 surface and/or intrinsic ripples of the graphene shee”