Large, non-saturating magnetoresistance in WTe2

By Mazhar N. Ali, J. Xiong, S. Flynn, J. Tao, Q. Gibson, L. Schoop, T. Liang, N. Haldolaarachchige, M. Hirschberger, N. Ong and 1 more. Nature, 2014

1,504 citations recorded by the source corpus.

Magnetoresistance is the change in a material’s electrical resistance in response to an applied magnetic field. Materials with large magnetoresistance have found use as magnetic sensors, in magnetic memory, and in hard drives at room temperature, and their rarity has motivated many fundamental studies in materials physics at low temperatures. Here we report the observation of an extremely large positive magnetoresistance at low temperatures in the non-magnetic layered transition-metal dichalcogenide WTe2: 452,700 per cent at 4.5 kelvins in a magnetic field of 14.7 teslas, and 13 million per cent at 0.53 kelvins in a magnetic field of 60 teslas. In contrast with other materials, there is no saturation of the magnetoresistance value even at very high applied fields. Determination of the origin and consequences of this effect, and the fabrication of thin films, nanostructures and devices based on the extremely large positive magnetoresistance of WTe2, will represent a significant new direction in the study of magnetoresistivity.

Subfields: Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/4eb17644305a5c6daff0f76351eb8e0506df1ad0

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electronic, Optical and Magnetic Materials

1. Stuart S. P. Parkin
2. Lukas Wollmann
3. A. Nayak
4. Claudia Felser
5. Yu Huang
6. Binghai Yan
7. Yan Sun
8. Yuan Liu

In Materials Chemistry

1. Claudia Felser
2. Binghai Yan
3. Yu Huang
4. Stuart S. P. Parkin
5. Xiangfeng Duan
6. Yuan Liu
7. D. Vanderbilt
8. Lukas Wollmann

Citations in the corpus

• Heusler 4.0: Tunable Materials (2016, background): “In general, semimetals exhibit ultra-high carrier mobilities and large transverse magnetoresistance values (MR), that are also promising effects for spintronic applications (104, 105, 106).”
• Highly-anisotropic optical and electrical properties in layered SnSe (2017, background): “By using a particular crystalline orientation, a large and non-saturating magnetoresistance has been achieved in anisotropic 2D materials, which suggests significant potential as magnetic sensors [8].”
• Superconductivity in Weyl semimetal candidate MoTe2 (2015, background): “For instance, T d (cid:2) WTe 2 has been found to exhibit an extremely large magnetoresistance 16,17 , pressure ( P )-driven superconductivity (highest resistive transition temperature T c E 7 K at 16.8 GPa) (refs 18,19), and a large and linear Nernst effect 20 .”
• Angle-resolved photoemission studies of quantum materials (2020, positive): “Others have argued for a conventional carrier compensation pic- ture (Pippard, 1989), in which the XMR derives from a nearly equal concentration of electrons and holes such as in WTe2 (Pletikosić et al., 2014) and LaSb (Zeng et al., 2016).”
• Extremely large magnetoresistance and ultrahigh mobility in the topological Weyl semimetal candidate NbP (2015, background): “As we will see, it exhibits ultrahigh carrier mobility comparable to that of Cd3As2 and extremely large MR surpassing that of WTe2.”