Highly-anisotropic optical and electrical properties in layered SnSe

By Shengxue Yang, Yuan Liu, Minghui Wu, Li-dong Zhao, Zhaoyang Lin, Hung-Chieh Cheng, Yiliu Wang, Chengbao Jiang, Suhuai Wei, Li Huang and 2 more. Nano Reseach, 2017

142 citations recorded by the source corpus.

Subfields: Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/f64237f20e3f17459e39381210b5ba486f2c0b7d

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In Materials Chemistry

1. Yujia Chen
2. Shengxue Yang
3. Chengbao Jiang

Citations in the corpus

• Strain engineering of two‐dimensional materials: Methods, properties, and applications (2021, background): “For example, fewlayer SnSe has a large anisotropic ratio of carrier mobility, and monolayer SnSe is a nearly direct band gap semiconductor with high electron mobility of 10(3) cm(2) V s at zero strain.(105,106) Under small tensile strain, the mobility of monolayer SnSe reaches up to 10(4) cm(2) V s,”