Raman spectra of epitaxial graphene on SiC(0001)
By Jonas Röhrl, M. Hundhausen, K. Emtsev, T. Seyller, R. Graupner, L. Ley. 2008
321 citations recorded by the source corpus.
Subfields: Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/4ea457d152ce516ab277b0d782b042bbba7b9ff8
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In Materials Chemistry
Citations in the corpus
- Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide. (2009, background): “The 2D-line consists of a narrow peak (full-width at half-maximum: 37 cm −1 ), which is characteristic of monolayer graphen”
- Revealing the atomic structure of the buffer layer between SiC(0001) and epitaxial graphene (2011, background): “However, at selected positions the typical 2D band of monolayer graphene was also detected, characterized by a single Lorentzian peak centered at 2760 cm -1 with an average fullwidth at half maximum (FWHM) of ≈55 cm -1 , which suggests the presence of inhomogeneous compressive strain [20,21].”
- Raman spectroscopy and imaging of graphene (2008, background): “Recently, Rohrl et al.([84]) also observed the blueshift of Raman bands of EG and they attributed it to the compressive strain caused by the different thermal expansion coefficients between EG and SiC.”