Oxygen-induced p-type doping of a long individual single-walled carbon nanotube

By Dong-hun Kang, N. Park, Ju-hye Ko, E. Bae, W. Park. 2005

156 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/4e67d6051817326876caa0d445439603609971b8

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. H. Philip Wong
2. Jie Deng
3. Subhasish G. Mitra
4. Nishant Patil
5. Daniele Ielmini
6. Shimeng Yu
7. Fabrizio Lombardi
8. Yong-Bin Kim

In Materials Chemistry

1. H. Philip Wong
2. Jie Deng
3. Fabrizio Lombardi
4. Yong-Bin Kim
5. Sheng Lin

Citations in the corpus

• Circuit-Level Performance Benchmarking and Scalability Analysis of Carbon Nanotube Transistor Circuits (2009, background): “These include: 1) Doping1 variations in CNFET source and drain regions that cause nonlinear variations in drive current [1], [17], [18].”