Evidence for a structurally-driven insulator-to-metal transition in VO 2 : A view from the ultrafast timescale
By A. Cavalleri, T. Dekorsy, H. Chong, J. Kieffer, R. Schoenlein. 2004
597 citations recorded by the source corpus.
We apply ultrafast spectroscopy to establish a time-domain hierarchy between structural and electronic effects in a strongly correlated electron system. We discuss the case of the model system ${\mathrm{VO}}_{2}$, a prototypical nonmagnetic compound that exhibits cell doubling, charge localization, and a metal-insulator transition below 340 K. We initiate the formation of the metallic phase by prompt hole photo-doping into the valence band of the low-$T$ insulator. The insulator-to-metal transition is, however, delayed with respect to hole injection, exhibiting a bottleneck time scale, associated with the phonon connecting the two crystallographic phases. This structural bottleneck is observed despite faster depletion of the $d$ bands and is indicative of important bandlike character for this controversial insulator.
Subfields: Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Polymers and Plastics
View Paper: https://www.semanticscholar.org/paper/4e0893a1b2458920244c5a1871e0972989ea7b30
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In Electronic, Optical and Magnetic Materials
Citations in the corpus
- Ultrafast optical spectroscopy of strongly correlated materials and high-temperature superconductors: a non-equilibrium approach (2016, background): “and electron diffraction [476, 477], P-p spectroscopies in the THz/mid-IR/visible ranges [260, 271, 473, 478–481] and time-resolved photoemission spectroscopy [482].”
- Oxide Electronics Utilizing Ultrafast Metal-Insulator Transitions (2011, unknown): “(56) used ultrafast spectroscopy to investigate the structural and electronic effects in VO2 in the time domain and observed that MIT is delayed with respect to hole injection (which was used to initiate the formation of the metallic phase).”