High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer

By C. Hai, J. Wager, R. Hoffman, J. Jeong, D. Keszler. 2005

781 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/4d49c5ffd0e81ad81608ad7d40842dda850f645c

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Pedro Barquinha
2. Jang Yeon Kwon
3. G. Gonçalves
4. Luís Pereira
5. Henning Sirringhaus
6. S. Parthiban
7. Elvira Fortunato
8. Rodrigo Martins

In Materials Chemistry

1. Pedro Barquinha
2. Jang Yeon Kwon
3. G. Gonçalves
4. Luís Pereira
5. S. Parthiban

Citations in the corpus

• Gallium–Indium–Zinc-Oxide-Based Thin-Film Transistors: Influence of the Source/Drain Material (2008, positive): “The key point that allowed this evolution was the exploitation of new multicomponent oxide semiconductors based on heavy-metal cations, e.g., zinc–tin oxide (ZTO) [8], indium–zinc oxide (IZO) [7], [9], [10], and gallium–indium–zinc oxide (GIZO) [11], which have excellent electrical properties in spi”