Gallium–Indium–Zinc-Oxide-Based Thin-Film Transistors: Influence of the Source/Drain Material

By Pedro Barquinha, A. Vilà, G. Gonçalves, Luís Pereira, Rodrigo Martins, J. Morante, Elvira Fortunato. IEEE Transactions on Electron Devices, 2008

182 citations recorded by the source corpus.

During the last years, oxide semiconductors have shown that they will have a key role in the future of electronics. In fact, several research groups have already presented working devices with remarkable electrical and optical properties based on these materials, mainly thin-film transistors (TFTs). Most of these TFTs use indium-tin oxide (ITO) as the material for source/drain electrodes. This paper focuses on the investigation of different materials to replace ITO in inverted-staggered TFTs based on gallium-indium-zinc oxide (GIZO) semiconductor. The analyzed electrode materials were indium-zinc oxide, Ti, Al, Mo, and Ti/Au, with each of these materials used in two different kinds of devices: one was annealed after GIZO channel deposition but prior to source/drain deposition, and the other was annealed at the end of device production. The results show an improvement on the electrical properties when the annealing is performed at the end (for instance, with Ti/Au electrodes, mobility rises from 19 to 25 cm2/V ldr s, and turn-on voltage drops from 4 to 2 V). Using time-of-flight secondary ion mass spectrometry (TOF-SIMS), we could confirm that some diffusion exists in the source/drain electrodes/semiconductor interface, which is in close agreement with the obtained electrical properties. In addition to TOF-SIMS results for relevant elements, electrical characterization is presented for each kind of device, including the extraction of source/drain series resistances and TFT intrinsic parameters, such as (intrinsic mobility) and VTi (intrinsic threshold voltage).

Subfields: Electrical and Electronic Engineering, Materials Chemistry, Polymers and Plastics

View Paper: https://www.semanticscholar.org/paper/72e3c586bb98bc186692fd5b41eae81e310cf75b

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In Electrical and Electronic Engineering

1. Rodrigo Martins
2. Elvira Fortunato
3. Pedro Barquinha
4. G. Gonçalves
5. Jae Kyeong Jeong

In Materials Chemistry

1. Rodrigo Martins
2. Elvira Fortunato
3. Pedro Barquinha
4. G. Gonçalves
5. Jae Kyeong Jeong

Citations in the corpus

• High-Performance Flexible Hybrid Field-Effect Transistors Based on Cellulose Fiber Paper (2008, methodology): “In this new device approach, we are using the cellulosefiber-based paper as an “interstrate” structure since the device is built on both sides of the cellulose sheet: the gate electrode, based on a transparent conductive oxide, is deposited on one side, and on the other is the active semiconductor, ”