Graphene segregated on Ni surfaces and transferred to insulators

By Qingkai Yu, J. Lian, S. Siriponglert, Hao Li, Yong P. Chen, S. Pei. 2008

1,283 citations recorded by the source corpus.

We report an approach to synthesize high quality graphene by surface segregation and substrate transfer. Graphene was segregated from Ni surface under the ambient pressure by dissolving carbon in Ni at high temperatures followed by cooling down with various rates. Different cooling rates led to different segregation behaviors, strongly affecting the thickness and quality of the graphene films. Electron microscopy and Raman spectroscopy indicated that the graphene films synthesized with medium cooling rates have high quality crystalline structure and well-controlled thicknesses. The graphene films were transferred to insulating substrates by wet etching and found to maintain their high quality.

Subfields: Materials Chemistry, Physical and Theoretical Chemistry

View Paper: https://www.semanticscholar.org/paper/4c7b79062ef9ce169040a6240bf22a7337f680c0

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Citations in the corpus

Growth of large-area single- and Bi-layer graphene by controlled carbon precipitation on polycrystalline Ni surfaces (2009, methodology): “concept has recently been used to produce 1–2 LG under either vacuum conditions [11, 20] or in an ambient pressure CVD process [14-17].”
Graphene/elastomer nanocomposites (2015, methodology): “Chemical vapour deposition on Ni substrate, first emerged as a method for the production of graphene back in 2008 [59].”
Carbon Nanomaterials for Next-Generation Interconnects and Passives: Physics, Status, and Prospects (2009, background): “In [89], graphene is segregated by dissolving carbon in a Ni substrate at high temperatures,”