Amorphous In–Ga–Zn–O coplanar homojunction thin-film transistor
By A. Sato, K. Abe, R. Hayashi, H. Kumomi, K. Nomura, T. Kamiya, M. Hirano, Hideo Hosono. 2009
176 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/4c467cb649de42c1d807bdc7a63790181edf0e3d
How researchers see this paper
The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.
In Electrical and Electronic Engineering
- Hideo Hosono
- T. Kamiya
- K. Nomura
- Jae Kyeong Jeong
- Jang Yeon Kwon
- John F. Conley
- Elvira Fortunato
- Pedro Barquinha
In Materials Chemistry
- Hideo Hosono
- T. Kamiya
- K. Nomura
- Jae Kyeong Jeong
- Jang Yeon Kwon
- John F. Conley
- Elvira Fortunato
- Pedro Barquinha
Citations in the corpus
- Origins of High Mobility and Low Operation Voltage of Amorphous Oxide TFTs: Electronic Structure, Electron Transport, Defects and Doping* (2009, background): “On the other hand, new approaches that utilize this drawback to developing low-resistance contacts and homojunction/self-aligned TFTs have been proposed [24]–[27].”