Spin Memristive Systems: Spin Memory Effects in Semiconductor Spintronics

By Yuriy V. Pershin, M. Di Ventra. 2008

215 citations recorded by the source corpus.

Recently, in addition to the well-known resistor, capacitor, and inductor, a fourth passive circuit element, named memristor, has been identified following theoretical predictions. The model example used in such case consisted in a nanoscale system with coupled ionic and electronic transport. Here, we discuss a system whose memristive behavior is based entirely on the electron-spin degree of freedom, which allows for a more convenient control than the ionic transport in nanostructures. An analysis of time-dependent spin transport at a semiconductor/ferromagnet junction provides a direct evidence of memristive behavior. Our scheme is fundamentally different from previously discussed schemes of memristive systems and broadens the possible range of applications of semiconductor spintronics.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/4a8bf8fa2873e174286860ca5cb49ef0c46e6b90

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In Atomic and Molecular Physics, and Optics

In Electrical and Electronic Engineering

Citations in the corpus

Experimental demonstration of associative memory with memristive neural networks (2009, background): “Memristors can be realized in many ways, ranging from oxide thin films [9-11] to spin memristive systems [12].”
Practical Approach to Programmable Analog Circuits With Memristors (2009, unknown): “Memristive behavior is found in many different systems [1], [2], [3], [4], [5], [6], [7], [8], [9], [10], [11], [12], [13] , [14], [15], [16], [17], [18], [19], [20].”
On the mathematical modeling of memristors (2010, methodology): “The Memristor found application in memory [4], biology [5], and spintronic [6].”
Phase-transition driven memristive system (2009, background): “that such devices may play key roles in developing neuromorphic circuits [4], spintronics [5], ultradense information storage [6], and other applications [7].”
Circuit Elements With Memory: Memristors, Memcapacitors, and Meminductors (2009, background): “In fact, it should not come as a surprise that many of the above examples refer to nanoscale systems, whose resistance is likely to depend on their state and dynamical history, at least within (possibly very short) time scales dictated by the fundamental state variables that control their operation ”