Contact resistivity and current flow path at metal/graphene contact
By K. Nagashio, T. Nishimura, K. Kita, A. Toriumi. 2010
320 citations recorded by the source corpus.
The contact properties between metal and graphene were examined. The electrical measurement on a multiprobe device with different contact areas revealed that the current flow preferentially entered graphene at the edge of the contact metal. The analysis using the cross-bridge Kelvin (CBK) structure suggested that a transition from the edge conduction to area conduction occurred for a contact length shorter than the transfer length of ∼1 μm. The contact resistivity for Ni was measured as ∼5×10−6 Ω cm2 using the CBK. A simple calculation suggests that a contact resistivity less than 10−9 Ω cm2 is required for miniaturized graphene field effect transistors.
Subfields: Atomic and Molecular Physics, and Optics, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/47b8e3d6eeead053c8dc287603a705da7fda7726
How researchers see this paper
The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.
In Atomic and Molecular Physics, and Optics
In Materials Chemistry
Citations in the corpus
- The role of contact resistance in graphene field-effect devices (2017, background): “Evaporator Exfoliated CBK 500 [110] Ni (60) E-Beam Exfoliated TLM 2500 [132] Ni (75) Evaporator CVD TLM 2200 [120] Ni/Au (100/10) E-Beam Exfoliated TLM 300 [113] Ni/Au (25/50) Evaporator CVD TLM 400 [120] Ni/Au (30/20) E-Beam CVD 2p/4p 2100 [133] Ni/Au(70/50) Sputtering Exfoliated TLM 7000 [134] Ni/”