Three-terminal field effect devices utilizing thin film vanadium oxide as the channel layer

By D. Ruzmetov, Gokul Gopalakrishnan, C. Ko, V. Narayanamurti, Shriram Ramanathan. 2010

153 citations recorded by the source corpus.

Electrostatic control of the metal-insulator transition (MIT) in an oxide semiconductor could potentially impact the emerging field of oxide electronics. Vanadium dioxide (VO2) is of particular interest due to the fact that the MIT happens in the vicinity of room temperature and it is considered to exhibit the Mott transition. We present a detailed account of our experimental investigation into three-terminal field effect transistor-like devices using thin film VO2 as the channel layer. The gate is separated from the channel through an insulating gate oxide layer, enabling true probing of the field effect with minimal or no interference from large leakage currents flowing directly from the electrode. The influence of the fabrication of multiple components of the device, including the gate oxide deposition, on the VO2 film characteristics is discussed. Further, we discuss the effect of the gate voltage on the device response, point out some of the unusual characteristics including temporal dependence. A re...

Subfields: Electrical and Electronic Engineering, Polymers and Plastics

View Paper: https://www.semanticscholar.org/paper/4778d79f1bc3c768fb93bac68424be8dd72f6987

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In Electrical and Electronic Engineering

1. C. Ko
2. Zheng Yang
3. Shriram Ramanathan

In Polymers and Plastics

1. C. Ko
2. Zheng Yang
3. Shriram Ramanathan

Citations in the corpus

• Oxide Electronics Utilizing Ultrafast Metal-Insulator Transitions (2011, background): “The authors (29) noted that the magnitude of the applied voltages was restricted to 0.”