High mobility bottom gate InGaZnO thin film transistors with SiOx etch stopper

By Min-Kyu Kim, J. Jeong, Hun Jung Lee, T. Ahn, H. Shin, Jin-seong Park, Jae Kyeong Jeong, Y. Mo, Hyedong Kim. 2007

440 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry, Polymers and Plastics

View Paper: https://www.semanticscholar.org/paper/476c661856d7e391a4b5b6908e2587d474065e2b

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Jang Yeon Kwon
2. Jae Kyeong Jeong
3. Y. Mo
4. Hideo Hosono
5. T. Kamiya

In Materials Chemistry

1. Jang Yeon Kwon
2. Jae Kyeong Jeong
3. Y. Mo

In Polymers and Plastics

1. Jang Yeon Kwon
2. Jae Kyeong Jeong

Citations in the corpus

• Comparative Study on Light-Induced Bias Stress Instability of IGZO Transistors With $\hbox{SiN}_{x}$ and $ \hbox{SiO}_{2}$ Gate Dielectrics (2010, methodology): “The fabricated TFTs had a bottom-gate and top-contact configuration [3].”
• Recent progress in high performance and reliable n-type transition metal oxide-based thin film transistors (2015, background): “The RC value of 2Ωcm was much smaller than those (20∼ 100Ωcm) reported for the bottom gate IGZO TFTs [87, 88].”