Schottky barrier diodes for millimeter wave detection in a foundry CMOS process

By S. Sankaran, O. KennethK.. IEEE Electron Device Letters, 2005

149 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/46cc95f3498bac9ec2bb910052b7348610f3ccc5

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. Tadao Nagatsuma
2. Ho-Jin Song

In Electrical and Electronic Engineering

1. Ho-Jin Song
2. Gabriel M. Rebeiz
3. Tadao Nagatsuma
4. Ian F. Akyildiz
5. Josep Miquel Jornet
6. Laurent Dussopt
7. Chong Han
8. Kamran Entesari

Citations in the corpus

• Present and Future of Terahertz Communications (2011, background): “Si-CMOS process can also operate at over 1 THz [58], and frequency multipliers and mixers using the Si-SBDs have been successfully demonstrated at over 100 GHz [59]–[61].”
• Design and Characterization of $W$-Band SiGe RFICs for Passive Millimeter-Wave Imaging (2010, background): “Millimeter-wave Schottky diode detectors can be implemented in standard SiGe/CMOS processes [20], [21], but these typically have a high NEP in comparison to the high-responsivity III–”
• A 0.65 THz Focal-Plane Array in a Quarter-Micron CMOS Process Technology (2009, unknown): “The terahertz capability of BiCMOS technologies may be further extended through integration of silicon Schottky diodes with cut-off frequencies higher than 1 THz [14], [15].”