Barrier height inhomogeneities of epitaxial CoSi2 Schottky contacts on n-Si (100) and (111)

By Shiyang Zhu, R. Meirhaeghe, C. Detavernier, F. Cardon, G. Ru, X. Qu, Bingzong Li. 2000

235 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/4611f8cef832128374582162838261608d5eea9b

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1. C.X. Zhu
2. S.J. Lee
3. D. Kwong
4. A. Chin
5. J. Singh
6. M. Li
7. Shiyang Zhu
8. C. Tung

Citations in the corpus

• N-type Schottky barrier source/drain MOSFET using ytterbium silicide (2004, background): “Other diodes have significantly higher leakage current at reverse bias, larger than unity ideality factors and larger difference between and , implying the unnegligible barrier height inhomogeneity [ 11 ].”