Prospects for high temperature ferromagnetism in (Ga,Mn)As semiconductors

By T. Jungwirth, Kaiyou Wang, J. Masek, K. Edmonds, Jürgen König, J. Sinova, M. Polini, N. Goncharuk, A. H. MacDonald, Maciej Sawicki and 5 more. 2005

350 citations recorded by the source corpus.

We report on a comprehensive combined experimental and theoretical study of Curie temperature trends in (Ga,Mn)As ferromagnetic semiconductors. Broad agreement between theoretical expectations and measured data allows us to conclude that ${T}_{c}$ in high-quality metallic samples increases linearly with the number of uncompensated local moments on ${\mathrm{Mn}}_{\mathrm{Ga}}$ acceptors, with no sign of saturation. Room temperature ferromagnetism is expected for a 10% concentration of these local moments. Our magnetotransport and magnetization data are consistent with the picture in which Mn impurities incorporated during growth at interstitial ${\mathrm{Mn}}_{\mathrm{I}}$ positions act as double-donors and compensate neighboring ${\mathrm{Mn}}_{\mathrm{Ga}}$ local moments because of strong near-neighbor ${\mathrm{Mn}}_{\mathrm{Ga}}{\mathrm{Mn}}_{\mathrm{I}}$ antiferromagnetic coupling. These defects can be efficiently removed by post-growth annealing. Our analysis suggests that there is no fundamental obstacle to substitutional ${\mathrm{Mn}}_{\mathrm{Ga}}$ doping in high-quality materials beyond our current maximum level of 6.8%, although this achievement will require further advances in growth condition control. Modest charge compensation does not limit the maximum Curie temperature possible in ferromagnetic semiconductors based on (Ga,Mn)As.

Subfields: Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/45c0955572c148076c7eb783a1e9054ee81fda74

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electronic, Optical and Magnetic Materials

1. T. Dietl
2. Hideo Ohno
3. T. Jungwirth
4. Allan H. MacDonald
5. J. Sinova
6. Jan Kucera
7. J. Masek

In Materials Chemistry

1. T. Dietl
2. Hideo Ohno
3. J. Sinova
4. T. Jungwirth
5. Allan H. MacDonald
6. J. Masek
7. Jan Kucera
8. J. Wunderlich

Citations in the corpus

• Theory of ferromagnetic (III, Mn) V semiconductors (2006, methodology): “…d exchange coupling, and the effective Mn-Mn magnetic interaction are among the problems that have been analyzed using this tool (Blinowski and Kacman, 2003; Jungwirth et al., 2003a, 2005a,b; Sankowski and Kacman, 2005; Tang and Flatté, 2004; Timm and MacDonald, 2005; Vurgaftman and Meyer, 2001).”
• Dilute ferromagnetic semiconductors: Physics and spintronic structures (2013, background): “, the coherent potential approximation (Jungwirth et al., 2005).”
• Spin-dependent phenomena and device concepts explored in (Ga,Mn)As (2013, background): “In the metallic regime Mn can, like a shallow acceptor (C, Be, Mg, Zn, e.g.), provide delocalized holes with a low-temperature density comparable to Mn density (Jungwirth et al., 2005; MacDonald et al., 2005; Ruzmetov et al., 2004).”