Size-, shape-, and position-controlled GaAs nano-whiskers

By B. Ohlsson, M. Björk, M. Magnusson, K. Deppert, Lars Samuelson, L. Wallenberg. 2001

236 citations recorded by the source corpus.

Subfields: Biomedical Engineering, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/44a07639d771649b15b723e748ae1eca1a353623

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Biomedical Engineering

1. Lars-Erik Wernersson
2. Tomas Bryllert
3. Lars Samuelson
4. L. Fröberg

In Electrical and Electronic Engineering

1. Lars-Erik Wernersson
2. Tomas Bryllert
3. Lars Samuelson
4. L. Fröberg

Citations in the corpus

• Vertical high-mobility wrap-gated InAs nanowire transistor (2006, methodology): “a chemical-beam-epitaxy (CBE) system [2].”
• Metal-catalyzed semiconductor nanowires: a review on the control of growth directions (2010, unknown): “Nanowires have been grown using several different kinds of techniques including chemical vapor deposition (CVD) [9, 10], laser ablation [11], supercritical fluid solution phase [12], metalorganic chemical vapor deposition (MOCVD) [13–15], chemical beam epitaxy (CBE) [16, 17] and molecular beam epita”