Field-effect transistor on pentacene single crystal
By V. Butko, X. Chi, D. Lang, A. P. Ramirez. 2003
208 citations recorded by the source corpus.
We report on the fabrication and characterization of field-effect transistors (FETs) on single-crystal pentacene. These FETs exhibit hole conductivity with room-temperature effective mobility (μeff) up to 0.30 cm2/V s and on/off ratios up to 5×106. A negative gate voltage of −50 V significantly decreases the activation energy (Ea) down to 0.143 eV near room temperature. Using this value of Ea and a simple model, we find the number of free carriers is only ∼0.4% of the total number of injected carriers. Along with μeff∼0.3 cm2/V s, this places the intrinsic mobility in the range of tens of cm2/V s.
Subfields: Electrical and Electronic Engineering, Materials Chemistry, Organic Chemistry
View Paper: https://www.semanticscholar.org/paper/44870aadf5b241004c0ae205268ef896ffdf8b43
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In Electrical and Electronic Engineering
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In Materials Chemistry
In Organic Chemistry
Citations in the corpus
- Electrostatic modification of novel materials (2006, background): “This is why the first single-crystal OFETs have been realized only recently Butko et al., 2003; de Boer et al., 2003; Podzorov, Pudalov, and Gershenson, 2003; Podzorov, Sysoev, et al., 2003; Takeya et al., 2003; Hasegawa et al., 2004 .”