Contact resistance in graphene-based devices

By Saverio Russo, Monica Felicia Craciun, M. Yamamoto, A. Morpurgo, S. Tarucha. 2009

207 citations recorded by the source corpus.

We report a systematic study of the total contact resistance present at the interface between a metal (Ti) and graphene layers of different, known thickness. By comparing devices fabricated on many different graphene flakes we demonstrate that the contact resistance consists of a gate independent and a gate dependent part. We show that quantitatively the gate independent part of the contact resistance is the same for single-, bi-, and tri-layer graphene. We argue that this is the result of charge transfer from the metal, causing the Fermi level in the graphene region under the contacts to shift far away from the charge neutrality point.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/43dfa4d492d8b331214acd8a8ace970d98f2cfb8

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In Electrical and Electronic Engineering

In Materials Chemistry

Citations in the corpus

Electrical characterization of 2D materials-based field-effect transistors (2020, background): “than quantum limit was consistently obtained from various device configurations including 2PP and 4PP measurements [118].”
Graphene Schottky diodes: an experimental review of the rectifying graphene/semiconductor heterojunction (2015, background): “been reported with Ni and Pa [29]-[32]), and can form rectifying junctions with several semiconductor materials.”
A role for graphene in silicon-based semiconductor devices (2011, background): “Although contact resistance is expected to be lower in strongly binding metals, binding strength has been shown not to affect resistance, as experimental values for gold, nickel and palladium are quite simila”
The role of contact resistance in graphene field-effect devices (2017, background): “Evaporator Exfoliated CBK 103÷106 [110] Ti/Au (10/25) E-Beam Exfoliated TLM 600÷1000 [109] Ti/Au (10/40) Evaporator Exfoliated 2p/4p < 400 [139] Ti/Au (100/10) E-Beam Exfoliated TLM 800 [113] Ti/Au (20/80) E-Beam CVD TLM 568 UV-ozone treatment [140] Ti/Au (5/50) E-Beam CVD 2p/4p 7500 [133] Ti/Au (5/”