Monolithic integration of room-temperature cw GaAs/AlGaAs lasers on Si substrates via relaxed graded GeSi buffer layers

By M. Groenert, C. Leitz, A. Pitera, V. Yang, Harry L. T. Lee, Rajeev J Ram, E. Fitzgerald. 2003

278 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/42a4beae1dd1c42bde402d0eeafb458dc931fc21

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In Atomic and Molecular Physics, and Optics

1. Connie J. Chang-Hasnain

In Electrical and Electronic Engineering

1. Connie J. Chang-Hasnain

Citations in the corpus

• Nanolasers Grown on Silicon (2011, background): “Laser materials have previously been grown on silicon substrates, but the required high growth temperatures would be detrimental to existing silicon electronic device”
• Epitaxial growth of highly mismatched III-V materials on (001) silicon for electronics and optoelectronics (2017, unknown): “ature CW operation of an InGaAs/InGaAsP multi-quantum-well (MQW) laser diode on a Si substrate was reported [87], and in 2003, GaAs/AlGaAs QW lasers were demonstrated on relaxed graded Ge/GeSi virtual substrates on Si [88].”