Isolated Spin Qubits in SiC with a High-Fidelity Infrared Spin-to-Photon Interface

By D. J. Christle, P. Klimov, C. F. D. L. Casas, K. Sz'asz, V. Iv'ady, V. Jokubavičius, J. Hassan, M. Syvajarvi, W. Koehl, T. Ohshima and 4 more. 2017

180 citations recorded by the source corpus.

The divacancies in SiC are a family of paramagnetic defects that show promise for quantum communication technologies due to their long-lived electron spin coherence and their optical addressability at near-telecom wavelengths. Nonetheless, a high-fidelity spin-photon interface, which is a crucial prerequisite for such technologies, has not yet been demonstrated. Here, we demonstrate that such an interface exists in isolated divacancies in epitaxial films of 3C-SiC and 4H-SiC. Our data show that divacancies in 4H-SiC have minimal undesirable spin mixing, and that the optical linewidths in our current sample are already similar to those of recent remote entanglement demonstrations in other systems. Moreover, we find that 3C-SiC divacancies have a millisecond Hahn-echo spin coherence time, which is among the longest measured in a naturally isotopic solid. The presence of defects with these properties in a commercial semiconductor that can be heteroepitaxially grown as a thin film on Si shows promise for future quantum networks based on SiC defects. DOI:https://doi.org/10.1103/PhysRevX.7.021046 Published by the American Physical Society under the terms of the Creative Commons Attribution 4.0 International license. Further distribution of this work must maintain attribution to the author(s) and the published article’s title, journal citation, and DOI. Published by the American Physical Society

Subfields: Atomic and Molecular Physics, and Optics, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/76f3b5a0621c6ba468dee89fc4b3d0f28e982947

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In Atomic and Molecular Physics, and Optics

1. Dirk Englund
2. Stefania Castelletto
3. Melissa Guidry
4. Jelena Vuckovic
5. Daniil Lukin
6. Masaya Notomi

In Materials Chemistry

1. Stefania Castelletto
2. Dirk Englund
3. A. Boretti

Citations in the corpus

• Integrated Quantum Photonics with Silicon Carbide: Challenges and Prospects (2020, background): “07 [61] is also an improvement over the NV center.”
• Silicon carbide color centers for quantum applications (2020, background): “The defect labeled Ky5 is the divacancy in polytype 3C at 1127 nm is studied in [83], [86].”
• Material platforms for spin-based photonic quantum technologies (2018, background): “d | Temperature dependence of the optical linewidths of various DV defects in 3C–SiC and 4H–SiC (ReF.(112)).”