Stress-induced voiding under vias connected to wide Cu metal leads

By E. Ogawa, Joe W. McPherson, J. Rosal, K. Dickerson, Tz-Cheng Chiu, L. Y. Tsung, M. Jain, Tom Bonifield, J. C. Ondrusek, W. Mckee. 2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual (Cat. No.02CH37320), 2002

150 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/40e377d39d668e5109f153b5875cd78512a5dd43

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1. N. Fujii
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4. Y. Kagawa
5. S. Nishi

Citations in the corpus

• Novel stacked CMOS image sensor with advanced Cu2Cu hybrid bonding (2016, background): “In advanced BEOL development, controlling the vacancies in Cu wiring is important to maintain device reliabilities such as stress induced void (SiV) properties [9].”