Intrinsic switching variability in HfO2 RRAM
By A. Fantini, L. Goux, R. Degraeve, D. Wouters, N. Raghavan, G. Kar, A. Belmonte, Yangyin Chen, B. Govoreanu, M. Jurczak. 2013 5th IEEE International Memory Workshop, 2013
192 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/40b3216f1ce51da220c62bd8727b6b12f1b9cdf8
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In Electrical and Electronic Engineering
Citations in the corpus
- A review of emerging non-volatile memory (NVM) technologies and applications (2016, background): “The stochastic RRAM switching mechanisms are reflected in the large variation in device resistance and switching voltages [33].”