A high-speed silicon optical modulator based on a metal–oxide–semiconductor capacitor
By Ansheng Liu, Richard Jones, L. Liao, D. Samara-Rubio, D. Rubin, O. Cohen, R. Nicolaescu, Mario Paniccia. Nature, 2004
1,556 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/4022a50bba91f9b847a5a958da3f389e116c146f
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In Electrical and Electronic Engineering
- Michal Lipson
- David A. B. Miller
- Richard A. Soref
- D. van Thourhout
- R. Baets
- Lukas Chrostowski
- Wim Bogaerts
- Michael Hochberg
In Materials Chemistry
Citations in the corpus
- Why I am optimistic about the silicon-photonic route to quantum computing (2016, background): “gigahertz [41, 42]) but then are lossy; they can be slow (e.”
- Ring Resonator Modulators in Silicon for Interchip Photonic Links (2013, neutral): “MZI modulators [11]–[25] are tolerant to manufacturing er-”
- Excitonic switches operating at around 100 K (2009, result): “These data are consistent with earlier data on exciton lifetime t in AlAs/GaAs CQW: t reduces (1) at positive V as a result of approaching the direct regime, (2) at negative V because of the escape of electrons and holes from the CQW through the reduced barrier, and (3) at high temperatures as a res”
- Ultra-compact silicon nanophotonic modulator with broadband response (2012, methodology): “This overall low loss is a signifi cant improvement over dielectric modulators which require millimeter long interaction lengths [3] ; thus even if their modal loss is much lower than that of the plasmonic MOS mode, smallest line-etch roughness imperfections accumulate over millimeter long distances”