10 kV and 15 kV silicon carbide power MOSFETs for next-generation energy conversion and transmission systems

By V. Pala, E. Brunt, Lin Cheng, M. O'loughlin, J. Richmond, A. Burk, S. Allen, D. Grider, J. Palmour, C. Scozzie. European Conference on Cognitive Ergonomics, 2014

136 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/3d065ef9b160eb02a69f5eb70f6defc4ec2a23d6

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In Electrical and Electronic Engineering

1. Alex Q. Huang
2. Burak Ozpineci
3. Jin Wang

Citations in the corpus

• Medium-Voltage Solid-State Transformer: Technology for a Smarter and Resilient Grid (2016, background): “The turn-on energy loss of the 15-kV SiC MOSFET is Vgs = 10 V Vgs = 12 V Vgs = 14 V Vgs = 16 V Vgs = 18 V Vgs = 20 V 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 50 100 150 Temperature (°C) (a) (b) 200 250 R ds _o n (Ω ) Eoff Comparison for 6.5-kV IGBT and 15-kV MOSFET at 4 kV 0 1 0.98 0.96 0.94 0.92 0.9 5 10 ”
• A Gate Drive With Power Over Fiber-Based Isolated Power Supply and Comprehensive Protection Functions for 15-kV SiC MOSFET (2016, background): “To date, 10- and 15-kV SiC MOSFETs [1]–[3], 13-kV p-i-n diode [4], 15-kV SiC IGBTs [5]– [13], and 16-kV n-channel insulated-gate bipolar transistor (IGBT) [4] have been developed and demonstrated.”
• High Switching Performance of 1700-V, 50-A SiC Power MOSFET Over Si IGBT/BiMOSFET for Advanced Power Conversion Applications (2016, background): “Whereas, the medium and high voltage category includes MOSFETs of 10, 15 kV and higher blocking capabilities [7]–[10].”
• 15 kV SiC MOSFET: An enabling technology for medium voltage solid state transformers (2017, methodology): “As mentioned previously, a series connected Si diode and a SiC JBS diode are used with the MOSFET to prevent the body diode conduction [21], [22].”
• Review of Silicon Carbide Power Devices and Their Applications (2017, background): “The highest blocking voltage reported for SiC MOSFET is 15 kV [47].”