Determination of the electronic structure of bilayer graphene from infrared spectroscopy

By L. M. Zhang, Zhiqiang Li, D. Basov, M. Fogler, Z. Hao, Michael C. Martin. 2008

212 citations recorded by the source corpus.

We present an experimental study of the infrared conductivity, transmission, and reflection of a gated bilayer graphene and their theoretical analysis within the Slonczewski-Weiss-McClure (SWMc) model. The infrared response is shown to be governed by the interplay of the interband and the intraband transitions among the four bands of the bilayer. The position of the main conductivity peak at the charge-neutrality point is determined by the interlayer tunneling frequency. The shift of this peak as a function of the gate voltage gives information about less known parameters of the SWMc model such as those responsible for the electron-hole and sublattice asymmetries. These parameter values are shown to be consistent with recent electronic structure calculations for the bilayer graphene and the SWMc parameters commonly used for the bulk graphite.

Subfields: Atomic and Molecular Physics, and Optics, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/3cef3774a74d6b053449bb7163cdf8c6807433e5

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In Atomic and Molecular Physics, and Optics

In Materials Chemistry

Citations in the corpus

Scanning tunnelling microscopy and spectroscopy of ultra-flat graphene on hexagonal boron nitride. (2011, methodology): “032 nm to fit known values for these hoppings in graphene bilayers[26].”
STM Spectroscopy of ultra-flat graphene on hexagonal boron nitride (2011, methodology): “032 nm to fit known values for these hoppings in graphene bilayers[26].”
Electronic properties of graphene-based bilayer systems (2015, methodology): “Thus, the tight-binding Hamiltonian of the bilayer graphene can be written as a sum of the Hamiltonians of two single-layer graphene sheets and a term describing the electron hopping between these sheets.”
Dirac electronic states in graphene systems: optical spectroscopy studies (2010, methodology): “e parametersof the graphenebilayerγ 1,γ 4 and ∆′ derived from infrared optical experiments performed on the exfoliated graphene bilayer specimen. Band structure parameter Value References γ 1 400 meV [113, 108] 378 meV [114, 115] ≈ 350 meV [107] γ 4 150 meV [113, 108] 140 meV [114, 115] ∆′ 18 meV [1”