Raman spectroscopy of epitaxial graphene on a SiC substrate

By Zhenhua Ni, Wei Chen, Xiaofeng Fan, J. Kuo, Ting Yu, A. Wee, Zexiang Shen. 2008

495 citations recorded by the source corpus.

may speed up the application of graphene for future electronic devices. The interaction of EG and the SiC substrate is critical to its electronic and physical properties. In this work, the Raman spectroscopy was used to study the structure of EG and its interaction with SiC substrate. All the Raman bands of EG blueshift from that of bulk graphite and graphene made by micromechanical cleavage, which was attributed to the compressive strain induced by the substrate. A model containing 13 13 honeycomb lattice cells of graphene on carbon nanomesh was constructed to explain the origin of strain. The lattice mismatch between graphene layer and substrate causes the compressive stress of 2.27 GPa on graphene. We also demonstrate that the electronic structures of EG grown on Si- and C-terminated SiC substrates are quite different. Our experimental results shed light on the interaction between graphene and SiC substrate, which are critical to the future applications of EG.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/3c637e5a9501fa3998cf92f1ed02600198af14fc

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

  1. V. Singh
  2. T. Yu
  3. A. Wee
  4. D. Jung
  5. L. Zhai
  6. Zhenhua Ni
  7. Xingyu Gao
  8. H. Kim

In Materials Chemistry

  1. Zhenhua Ni
  2. T. Yu
  3. Zexiang Shen
  4. Yingying Wang
  5. Daeha Joung
  6. V. Singh
  7. A. Wee
  8. D. Jung

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