High switching endurance in TaOx memristive devices

By J. Joshua Yang, Min-xian Zhang, John Paul Strachan, Feng Miao, Matthew D. Pickett, Ronald D. Kelley, G. Medeiros-Ribeiro, R. S. Williams. 2010

618 citations recorded by the source corpus.

We demonstrate over 1×1010 open-loop switching cycles from a simple memristive device stack of Pt/TaOx/Ta. We compare this system to a similar device stack based on titanium oxides to obtain insight into the solid-state thermodynamic and kinetic factors that influence endurance in metal-oxide memristors.

Subfields: Cellular and Molecular Neuroscience, Cognitive Neuroscience, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/3bc37c524437ff7d264faecf137ae292fa85c578

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In Cellular and Molecular Neuroscience

In Cognitive Neuroscience

In Electrical and Electronic Engineering

Citations in the corpus

MRL — Memristor Ratioed Logic (2012, background): “Currently, except for STT-MRAM, memristive devices suffer from endurance limitations, where the number of allowed writes per cell is approximately 10(10) [7].”
Addressing failures in exascale computing (2014, background): “In new work on tantalum oxide memristors, endurance of over 10 billion cycles has been demonstrated (Yang et al., 2010).”
Memristor-based neural networks (2013, background): “The nano-switches can be deposited by, e.g., electron-beam evaporation or sputtering and more than 10 10 switching cycles were shown for some of the layer stacks [10, 11].”
State Dynamics and Modeling of Tantalum Oxide Memristors (2013, background): “Several research groups, including the present authors, studied this system and reported write/erase endurance demonstrations, high speed with low-energy switching, multilevel analog states, using a threshold switching layer to reduce sneak paths in crossbars, and long retention time [5]–[12].”
Resistive switching memories based on metal oxides: mechanisms, reliability and scaling (2016, background): “Among the emerging memory technologies, RRAM is one of the most promising devices given its good cycling endurance [23, 24], moderately high speed [25, 26], ease of fabrication and good scaling behavior.”
State of the art of metal oxide memristor devices (2016, background): “A variety of factors including mainly the semiconducting properties and the inevitably associated Joule heating effects are decisive in the design of operational MIM stacking [95].”