Third-order nonlinearities in silicon at telecom wavelengths

By M. Dinu, F. Quochi, H. Garcia. 2003

679 citations recorded by the source corpus.

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

Multilayer Silicon Nitride-on-Silicon Integrated Photonic Platforms and Devices (2015, neutral): “about 20 times smaller than that of Si [5], [6], which means SiN waveguides can handle higher optical powers than Si waveguides.”
Electric field-induced second-order nonlinear optical effects in silicon waveguides (2016, methodology): “The model in [16] and the third order nonlinearities in [14, 16-22] were used”
Expanding the Silicon Photonics Portfolio With Silicon Nitride Photonic Integrated Circuits (2017, neutral): “Already at a continuous wave power of a few tens of mW the TPA-induced penalty sets in.”
An all-silicon Raman laser (2005, background): “, under high-power excitation two photon absorption (TPA) in silico”
Nonlinear Optics in Doped Silica Glass Integrated Waveguide Structures (2008, background): “n2 / (β λ), where β is the two-photon absorption coefficient and λ the wavelength) is very low [11].”
Optical amplification and lasing by stimulated Raman scattering in silicon waveguides (2006, methodology): “Although the pure TPA effect should be small in our experiment according to the ultrafast laser measurement results [55], [56], under CW pump condition, the cumulative free carrier density can reach a significant level because of the finite carrier lifetime in silicon.”