Robust electrical spin injection into a semiconductor heterostructure

By B. Jonker, Y. Park, B. R. Bennett, H. Cheong, G. Kioseoglou, A. Petrou. 2000

419 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/398c6c85e840e93a80417e63065f23a2022ee6af

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. T. Dietl
2. Hideo Ohno
3. C. Marrows
4. H. Akinaga
5. Fumihiro Matsukura

In Materials Chemistry

1. Hideo Ohno
2. T. Dietl
3. C. Marrows
4. H. Akinaga
5. T. Jungwirth
6. Allan H. MacDonald

Citations in the corpus

• Dilute ferromagnetic semiconductors: Physics and spintronic structures (2013, methodology): “Hence, according to corresponding selection rules, this method allows to detect carriers with spins polarized along the growth direction, which give rise to circularly polarized vertical (surface) emission (Fiederling et al., 2003; Jonker et al., 2000; Oestreich, 1999).”
• Spin-polarised currents and magnetic domain walls (2005, background): “Several groups have recently demonstrated spin injection from metals[79, 80, 81], ferromagnetic semiconductors [82, 83, 84] and tunnel and hot electron injectors [85, 86, 87] into a semiconductor by using a so-called spin-LED as a detector.”