Review of Silicon Photonics Foundry Efforts

By A. Lim, Junfeng Song, Q. Fang, C. Li, X. Tu, N. Duan, Kok-Kiong Chen, R. Tern, T. Liow. IEEE Journal of Selected Topics in Quantum Electronics, 2014

364 citations recorded by the source corpus.

Subfields: Biomedical Engineering, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/396b0d823662360a3c8e51f5ac86559f064ecda2

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In Biomedical Engineering

Michal Lipson

In Electrical and Electronic Engineering

Citations in the corpus

Practical challenges in quantum key distribution (2016, neutral): “Two main integration platforms are currently being explored, namely silicon (Si) 71 and indium phosphide (InP), 72 whereas alternative techniques include lithium niobate (LiNbO 3 ) integration and glass waveguide technologies.”
Low-loss silicon platform for broadband mid-infrared photonics (2017, positive): “Concurrently, silicon photonics has transformed near-IR telecommunications technologies while leveraging the immense semiconductor fabrication infrastructure of the electronics industry [5,6].”
Review of Silicon Photonics Technology and Platform Development (2021, background): “In doing so, researchers hoped to achieve an order-of-magnitude improvement in yield, and cost and timeto-market with less additional investment [1], [2].”
Hybrid integrated quantum photonic circuits (2020, methodology): “In particular, such approaches offer: (1) functional scalability, based on the miniaturization of optical components coupled with the ability of replication and mass production3; (2) stability, as the circuits are built on a robust solid-state platform that minimizes deviations between adjacent opti”
Multilayer Silicon Nitride-on-Silicon Integrated Photonic Platforms and Devices (2015, neutral): “In Si, compact, fully-etched waveguide crossings fabricated using photolithography (i.e., without sub- wavelength features) at best have an insertion loss in the range of 0.04–0.1 dB and a crosstalk of −35 dB in the C-band [31], and using genetic algorithms, an insertion loss better than 0.04 dB can”
Silicon electro-optic micro-modulator fabricated in standard CMOS technology as components for all silicon monolithic integrated optoelectronic systems (2021, neutral): “The key towards to successful commercialization of any Si-based light-emitting device (LED) manufacturing technology is how to develop a highvolume manufacturing process where light-emitters can be processed in a CMOS fabrication facility alongside existing CMOS wafers in order to amortize their cos”