Andreev reflection and Klein tunneling in graphene

By C. Beenakker. 2007

921 citations recorded by the source corpus.

This is a colloquium-style introduction to two electronic processes in a carbon monolayer (graphene), each having an analogue in relativistic quantum mechanics. Both processes couple electron-like and hole-like states, through the action of either a superconducting pair potential or an electrostatic potential. The first process, Andreev reflection, is the electron-to-hole conversion at the interface with a superconductor. The second process, Klein tunneling, is the tunneling through a p-n junction. Existing and proposed experiments on Josephson junctions and bipolar junctions in graphene are discussed from a unified perspective. CONTENTS: I. INTRODUCTION II. BASIC PHYSICS OF GRAPHENE (Dirac equation; Time reversal symmetry; Boundary conditions; Pseudo-diffusive dynamics) III. ANDREEV REFLECTION (Electron-hole conversion; Retro-reflection vs. specular reflection; Dirac-Bogoliubov-de Gennes equation; Josephson junctions; Further reading) IV. KLEIN TUNNELING (Absence of backscattering; Bipolar junctions; Magnetic field effects; Further reading) V. ANALOGIES (Mapping between NS and p-n junction; Retro-reflection vs. negative refraction; Valley-isospin dependent quantum Hall effect; Pseudo-superconductivity)

Subfields: Atomic and Molecular Physics, and Optics, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/39285e6a2db032805a2d0df59912aaff5aada613

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In Atomic and Molecular Physics, and Optics

  1. N. M. R. Peres
  2. E. Rossi
  3. E. Hwang
  4. S. Adam
  5. K. Novoselov
  6. A. Di Bartolomeo
  7. M. Potemski
  8. M. Orlita

In Materials Chemistry

  1. N. M. R. Peres
  2. E. Rossi
  3. E. Hwang
  4. S. Adam
  5. A. Di Bartolomeo
  6. K. Novoselov
  7. M. Potemski
  8. M. Orlita

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