Singlet-triplet spin blockade and charge sensing in a few-electron double quantum dot

By A. Johnson, Jason R. Petta, Charles Marcus, M. Hanson, Arthur C. Gossard. 2004

199 citations recorded by the source corpus.

Singlet-triplet spin blockade in a few-electron lateral double quantum dot is investigated using simultaneous transport and charge-sensing measurements. Transport from the (1,1) to the (0,2) electron occupancy states is strongly suppressed relative to the opposite bias [(0,2)--(1,1)]. At large bias, spin blockade ceases as the (0,2) triplet state enters the transport window, giving a direct measure of exchange splitting of the (0,2) state as a function of magnetic field. A simple model for current and steady-state charge distribution in spin-blockade conditions is developed and found to be in excellent agreement with experiment. Three other transitions [(1,1)--(2,0), (1,3)--(2,2), and (1,3)--(0,4)] exhibit spin blockade while other nearby transitions and opposite bias configurations do not, consistent with simple even-odd shell filling.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/38ab9c935789e4886856b75c24db9cb8c9b4742a

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In Atomic and Molecular Physics, and Optics

In Electrical and Electronic Engineering

Citations in the corpus

Spins in few-electron quantum dots (2006, methodology): “Later experiments in few-electron lateral dots combined charge sensing and transport to study the effect (Johnson et al., 2005b).”
Silicon quantum electronics (2012, background): “…additional valley greatly complicates spin manipulation because it can lift Pauli spin blockade, which is fundamental for many strategies for spin manipulation in quantum dot nanodevices (Hüttel et al., 2003; Johnson et al., 2005a; Koppens et al., 2005; Ono et al., 2002; Rokhinson et al., 2001).”
Spin blockade and lifetime-enhanced transport in a few-electron Si/SiGe double quantum dot (2007, unknown): “2mV) triangles representing the (1,0)–(1,1)–(2,0)–(2,1) charge transition.”