Dynamic leakage current compensation in ferroelectric thin-film capacitor structures

By René Meyera, Rainer Waser, K. Prume, T. Schmitz, S. Tiedke. 2005

150 citations recorded by the source corpus.

Subfields: Biomedical Engineering, Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/38586b1751b57c73fc7b0bc545ff45c2f62abc1e

Citations in the corpus

• Engineering Ferroelectric Hf0.5Zr0.5O2 Thin Films by Epitaxial Stress (2019, unknown): “(3) Mikolajick, T.; Slesazeck, S.; Park, M. H.; Schroeder, U. Ferroelectric Hafnium Oxide for Ferroelectric Random-Access Memories and Ferroelectric Field-Effect Transistors. MRS Bull. 2018, 43, 340. (4) Park, M. H.; Lee, Y. H.; Mikolajick, T.; Schroeder, U.; Hwang C. S. Review and Perspective on Fe”