Engineering Ferroelectric Hf0.5Zr0.5O2 Thin Films by Epitaxial Stress

By S. Estandía, N. Dix, J. Gázquez, I. Fina, J. Lyu, M. Chisholm, J. Fontcuberta, F. Sánchez. ACS Applied Electronic Materials, 2019

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The critical impact of epitaxial stress on the stabilization of the ferroelectric orthorhombic phase of hafnia is proved. Epitaxial bilayers of Hf0.5Zr0.5O2 (HZO) and La0.67Sr0.33MnO3 (LSMO) electr...

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/8a411f4879994b7ff3554bfd71c8ea0c74c54e90