Temperature-dependent magnetization in diluted magnetic semiconductors

By Euyheon Hwang, A. Kaminski. 2002

244 citations recorded by the source corpus.

We calculate magnetization in magnetically doped semiconductors assuming a local exchange model of carrier-mediated ferromagnetic mechanism and using a number of complementary theoretical approaches. In general, we find that the results of our mean-field calculations, particularly the dynamical mean-field theory results, give excellent qualitative agreement with the experimentally observed magnetization in systems with itinerant charge carriers, such as ${\mathrm{Ga}}_{1\ensuremath{-}x}{\mathrm{Mn}}_{x}\mathrm{As}$ with $0.03lxl0.07,$ whereas our percolation-theory-based calculations agree well with the existing data in strongly insulating materials, such as ${\mathrm{Ge}}_{1\ensuremath{-}x}{\mathrm{Mn}}_{x}.$ We comment on the issue of non-mean-field like magnetization curves and on the observed incomplete saturation magnetization values in diluted magnetic semiconductors from our theoretical perspective. In agreement with experimental observations, we find the carrier density to be the crucial parameter determining the magnetization behavior. Our calculated dependence of magnetization on external magnetic field is also in excellent agreement with the existing experimental data.

Subfields: Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/381d2ff656a831a0cb637c30e454b2bbcd78c121

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In Condensed Matter Physics

  1. J. Sinova
  2. T. Jungwirth
  3. Allan H. MacDonald

In Electronic, Optical and Magnetic Materials

  1. J. Masek
  2. Jan Kucera
  3. J. Sinova
  4. Allan H. MacDonald
  5. T. Jungwirth
  6. T. Dietl

In Materials Chemistry

  1. J. Sinova
  2. T. Jungwirth
  3. Allan H. MacDonald
  4. J. Masek
  5. Jan Kucera
  6. T. Dietl
  7. Ashvin Vishwanath
  8. Q. Niu

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