Temperature-dependent magnetization in diluted magnetic semiconductors
By Euyheon Hwang, A. Kaminski. 2002
244 citations recorded by the source corpus.
We calculate magnetization in magnetically doped semiconductors assuming a local exchange model of carrier-mediated ferromagnetic mechanism and using a number of complementary theoretical approaches. In general, we find that the results of our mean-field calculations, particularly the dynamical mean-field theory results, give excellent qualitative agreement with the experimentally observed magnetization in systems with itinerant charge carriers, such as ${\mathrm{Ga}}_{1\ensuremath{-}x}{\mathrm{Mn}}_{x}\mathrm{As}$ with $0.03lxl0.07,$ whereas our percolation-theory-based calculations agree well with the existing data in strongly insulating materials, such as ${\mathrm{Ge}}_{1\ensuremath{-}x}{\mathrm{Mn}}_{x}.$ We comment on the issue of non-mean-field like magnetization curves and on the observed incomplete saturation magnetization values in diluted magnetic semiconductors from our theoretical perspective. In agreement with experimental observations, we find the carrier density to be the crucial parameter determining the magnetization behavior. Our calculated dependence of magnetization on external magnetic field is also in excellent agreement with the existing experimental data.
Subfields: Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/381d2ff656a831a0cb637c30e454b2bbcd78c121
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In Condensed Matter Physics
In Electronic, Optical and Magnetic Materials
In Materials Chemistry
Citations in the corpus
- Theory of ferromagnetic (III, Mn) V semiconductors (2006, background): “On the other hand, the impurity band models may represent a useful approach to address experimental magnetic and transport properties of ferromagnetic (Ga,Mn)P where holes are more strongly localized (Das Sarma et al., 2003; Kaminski and Das Sarma, 2003; Scarpulla et al., 2005).”