Strain-induced band gap shrinkage in Ge grown on Si substrate

By Y. Ishikawa, K. Wada, D. D. Cannon, Jifeng Liu, H. Luan, Lionel C. Kimerling. 2003

380 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Biomedical Engineering, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/380494291ad5cda801a6dc6ee3635541c5f5319c

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. Jürgen Michel
2. Lionel C. Kimerling
3. Jifeng Liu

In Biomedical Engineering

1. Jürgen Michel

In Electrical and Electronic Engineering

1. Jürgen Michel
2. Lionel C. Kimerling
3. Jifeng Liu

Citations in the corpus

• High-performance Ge-on-Si photodetectors (2010, background): “This is usually the case for epitaxial Ge films fabricated by the two-step growth for optoelectronic applications, as the Ge film thickness required for a strong interaction with near-infrared light is usually >200 nm, and the second step of growth is usually performed at temperatures above 600 °C (”