Polarization-matched GaInN∕AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop

By M. Schubert, Jiuru Xu, Jong Kyu Kim, E. Schubert, Min Kim, Sukho Yoon, Soo-Min Lee, C. Sone, S. Tan, Yongjo Park. 2008

483 citations recorded by the source corpus.

Blue multi-quantum-well light-emitting diodes (LEDs) with GaInN quantum wells and polarization-matched AlGaInN barriers are grown by metal-organic chemical vapor deposition. The use of quaternary alloys enables an independent control over interface polarization charges and bandgap and has been suggested as a method to reduce electron leakage from the active region, a carrier loss mechanism that can reduce efficiency at high injection currents—an effect known as the efficiency droop. The GaInN∕AlGaInN LEDs show reduced forward voltage, reduced efficiency droop, and improved light-output power at large currents compared to conventional GaInN∕GaN LEDs.

Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/37d9f509a789b69b82ef45e69e16dbf3b2b22db1

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Citations in the corpus

• High-Power and High-Efficiency InGaN-Based Light Emitters (2010, background): “Among these are carrier escape [4]–[6], losses due to dislocations [7]– [10], piezoelectric fields [11]–[13], as well as the Auger effect [14]–[16].”
• Control of Quantum-Confined Stark Effect in InGaN-Based Quantum Wells (2009, background): “InGaN QWs in the LED structure has been demonstrated to control the polarization field in the active region, resulting in the mitigation of efficiency droop [104].”