Sulfur vacancies in monolayer MoS2 and its electrical contacts

By Dameng Liu, Yuzheng Guo, L. Fang, John Robertson. 2013

382 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/36e6603fd39dafc61c5e78da26a257cc3473f36f

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Filippo Giubileo
2. Sanjay Kumar Banerjee
3. A. Di Bartolomeo

In Materials Chemistry

1. Filippo Giubileo
2. Giuseppe Luongo
3. L. Iemmo
4. Tobias Foller
5. L. Genovese
6. M. Schleberger
7. Sanjay Kumar Banerjee
8. Hema C. P. Movva

Citations in the corpus

• Progress in Contact, Doping and Mobility Engineering of MoS2: An Atomically Thin 2D Semiconductor (2018, background): “1, SVs are also responsible for the strong contact FLP effect that leads to uncontrolled and large SBH for carrier injection [142,143,147,295].”
• Hysteresis in the transfer characteristics of MoS2 transistors (2017, background): “5 eV from the minimum of the conduction band [53, 68].”