Selective Adsorption of Thiol Molecules at Sulfur Vacancies on MoS2(0001), Followed by Vacancy Repair via S–C Dissociation
By M. Makarova, Y. Okawa, Masakazu Aono. 2012
145 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering, Materials Chemistry, Renewable Energy, Sustainability and the Environment
View Paper: https://www.semanticscholar.org/paper/363045cf6a09f0333c2c682763a181878ad64089
How researchers see this paper
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In Electrical and Electronic Engineering
- Francesco Bonaccorso
- Andrea C. Ferrari
- Z. Ong
- C. Backes
- Xiaodong Zhuang
- A. Ciesielski
- Paolo Samorì
- A. Castellanos-Gómez
In Materials Chemistry
- Kostas Kostarelos
- M. Prato
- Francesco Bonaccorso
- A. Bianco
- Gang Zhang
- A. Castellanos-Gómez
- Jonathan N. Coleman
- Andrea C. Ferrari
In Renewable Energy, Sustainability and the Environment
Citations in the corpus
- Towards intrinsic charge transport in monolayer molybdenum disulfide by defect and interface engineering (2014, background): “At T1⁄4 10K, m1⁄4 320 cm2V 1 s 1 for the DS-treated sample, which is B3 (22) times higher than the TS-treated (as-exfoliated) one.”
- Production and processing of graphene and related materials (2020, background): “Reductive covalent functionalization Functionalization of MoS2 can be achieved by ligand conjugation of thiols at S vacancy sites either introduced by ion irradiation [1403] or naturally occurring after chemical exfoliation [1404, 1405].”