Ultrasmall Si-nanowire-based polarization rotator

By Zhechao Wang, Daoxin Dai. 2008

179 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Surfaces, Coatings and Films

View Paper: https://www.semanticscholar.org/paper/341c3c2e27e1a0f59f15a9d9f87dc9de7e8bd245

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. John E. Bowers
2. Martijn J. R. Heck
3. Daoxin Dai

In Electrical and Electronic Engineering

1. John E. Bowers
2. Martijn J. R. Heck
3. Daoxin Dai
4. Lorenzo Pavesi
5. Laurent Vivien
6. Po Dong

In Surfaces, Coatings and Films

1. John E. Bowers

Citations in the corpus

• Hybrid Silicon Photonic Integrated Circuit Technology (2013, methodology): “These PICs are enabled by the technology platform as discussed in Section II and make use of the components, or building blocks, as reviewed in Section III.”
• Silicon-based on-chip multiplexing technologies and devices for Peta-bit optical interconnects (2014, background): “In [151], an ultra-short SOI-nanowire PR is proposed by introducing an input section, an output section and a polarization-rotation section with a cut corner (see Figure 21A and B).”
• Handbook of Silicon Photonics (2013, background): “A partial etch of the waveguide also creates an asymmetric waveguide with 2 hybrid TE/TM modes with different propagation constants [29].”